国家“杰青”、中科院”百人计划“、享国务院特殊津贴、中青年科技创新领军人才：李京波教授

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个人简述	李京波教授，博士生导师（2007年入选中科院“百人计划”，2009年获“国家杰出青年基金”）。2001年毕业于中国科学院半导体研究所，获得理学博士学位。2001年至2004年，在美国伯克利劳伦斯国家实验室做博士后；2004年至2007年，美国再生能源国家实验室助理研究员；2007年5月，入选中国科学院“百人计划”，同时进入半导体超晶格国家重点实验室工作，从事半导体掺杂机制和纳米材料的研究。2015年12月起任广东工业大学先进装备与光电技术研究所所长。在半导体掺杂机制和纳米材料等前沿领域中取得的一系列创新性研究成果：(1)发表了180余篇论文，其中包括Nature、Nature Materials、Nature Comm.、 PRL、Nano Letters、JACS 和APL/PRB 上发表超过80篇论文。被国际同行引用超过6000次，最高单篇引用超过800次，单篇被引用超过100次的论文有12篇,获授权发明专利12项，对半导体光电材料与器件的设计有重要的指导作用。(2)首次从理论上研究了形状对纳米团簇电子态的影响，并且对相关的实验进行了解释。(3)与合作者提出了Charge Patching方法，实现了上万原子的第一性原理精度计算，该方法特别适用于大原胞的半导体合金和纳米团簇的大规模计算。(4)对半导体掺杂机制有深入的研究，提出GaN和ZnO等实现p-型掺杂的实验模型，并用第一性原理进行计算，获得国际同行的广泛关注。(5)首次研究了量子点中杂质的稳定性, 预言在硅掺杂的GaAs量子点中，如量子点的尺寸小于14纳米，将出现DX深能级中心。(6)首次预言了CdS量子点比CdSe量子点更容易观察到“暗激子现象”，该预言被美国P.F.Barbara教授的实验小组所证实。论文已经被国际同行高度评价和大量引用，至今已被引用两千余次。2008年9月2日《科技日报》第十版以《李京波：半导体照明学科带头人》为题报道了李京波研究员的最新研究进展。2009年3月17日《自然》（亚洲材料）报道了李京波小组在光催化材料研究中取得的重要进展。2009年获国家杰出青年基金（信息学部）。

学科领域	科学学位：材料科学与工程材料学物理电子学微电子学与固体电子学专业学位：材料工程电子与通信工程

教育背景	1990.9-1994.7 湖南师范大学物理系获理学学士，物理专业； 1994.9-1997.2 华南理工大学应用物理系获理学硕士学位，凝聚态物理专业； 1998.9-2001.7 中国科学院半导体研究所获理学博士学位，凝聚态物理专业；

工作经历	2001.9-2004.9 美国伯克利劳伦斯国家实验室博士后。 2004.9-2007.7 美国再生能源国家实验室助理研究员。 2007.7 中国科学院半导体研究所研究员、博士生导师。 2015.12至今广东工业大学先进装备与光电技术研究所所长

主要荣誉	2015年，享受国务院政府特殊津贴； 2014年，获中青年科技创新领军人才（中组部“万人计划”）； 2013年，“杰青”终期评估“优秀”； 2012年，“百人计划”终期评估获评“优秀”； 2011年，浙江省“千人计划”荣誉称号（企业创新类）； 2009年，获“国家杰出青年基金”（信息学部）； 2007年，入选中国科学院“百人计划”； 1998年，获广东省高校科技进步二等奖。

主要论文	2007年以来发表代表性论文如下（为通讯作者）： 1)S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. Li, A. Suslu, F. Peeters, Q. Liu, Jingbo Li, S. Tongay, “Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering”, Nano Letters, 15,1660 (2015). 2)B. Li, L. Huang, M. Zhong, N. J. Huo, Y. T. Li, S. Yang, C. Fan, J. Yang, W. P. Hu, Z. M. Wei* and Jingbo Li, “Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets”, ACS Nano, 9,1257 (2015). 3)N. J. Huo, J. H. Yang, L. Huang, Z. M. Wei, S.-S. Li, S.-H. Wei, and Jingbo Li., “Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions”, Small, (2015), online, DOI: 10.1002/smll.201501206. 4)J. H. Yang, N. J. Huo, Y. Li, X.-W. Jiang, T. Li, R. X. Li, F. Y. Lu, C. Fan, B. Li, Kasper Nørgaard, B. W. Laursen, Z. M. Wei, Jingbo Li,* and S.-S. Li, “Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO”, Adv. Electron. Mater., (2015), accepted, DOI: 10.1002/aelm.201500267. 5)L. Huang, N. J. Huo, Y. Li, H. Chen, J. H. Yang, Z. M. Wei,* Jingbo Li,* and S.-S. Li, “Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure”, J. Phys. Chem. Lett., 6, 2483 (2015). 6)F. Lu, J. H. Yang, R. X. Li, N. J. Huo, Y. T. Li, Z. M. Wei* and Jingbo Li, “Gas-dependent photoresponse of SnS nanoparticles-based photodetectors”, J. Mater. Chem. C, 3, 1397 (2015). 7)N. J. Huo, Z. M. Wei, X. Meng, J. Kang, F. Wu, S.-S. Li, S.-H. Wei, Jingbo Li, “Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS2 and WS2”, J. Mater. Chem. C, 3, 5467 (2015). 8)F. Lu, R. X. Li, Y. Li, N. J. Huo, J. H. Yang, Y. T. Li, B. Li, S. X. Yang, Z. M. Wei and Jingbo Li, “Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication”, ChemPhysChem, 16, 99 (2015). 9)Z. M. Zhong, Z. M. Wei, X. Q. Meng, F. M. Wu, Jingbo Li, “Ultra-sensitive humidity sensors based on ZnSb2O4 nanoparticles”, RSC Adv., 5, 2429 (2015). 10)S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. S. Li, Jingbo Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling”, Nature Communications, 5,3252 (2014). 11)N. J. Huo, J. Kang, Z. M. Wei, S. S. Li, Jingbo Li* and S. H. Wei, “Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors”, Adv. Funct. Mater., 24, 7025 (2014). 12)N. J. Huo, S. X. Yang, Z. M. Wei, S. S. Li, J. B. Xia, Jingbo Li, “Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes”, Scientific Reports, 4, 5209 (2014). 13)S. X. Yang, Y. Li, X. Z. Wang, N. J. Huo, J. B. Xia, S. S. Li, Jingbo Li, “High performance few-layer GaS photodetector and its unique photo-response in different gas environments”, Nanosale, 6, 2582 (2014). 14)S. X. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, Jingbo Li and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors”, Nanosale, 6, 7226 (2014). 15)C. Fan, T. Li, Z. M. Wei, N. J. Huo, F. Lu, J. H. Yang, R. X. Li, S. X. Yang, B. Li, W. P. Hu, Jingbo Li, “Novel Micro-Rings of MoS2”, Nanosale, 6, 14652 (2014). 16)J. H. Yang, F. Lu, Y. Li, S. X. Yang, R. X. Li, N. J. Huo, C. Fan, Z. M. Wei, Jingbo Li, S. S. Li, “Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets” , J. Mater. Chem. C, 2, 1034 (2014). 17)N. J. Huo, Y. Li, J. Kang, R. Li, Q. Xia, Jingbo Li, “Edge-states ferromagnetism of WS2 nanosheets”, Appl. Phys. Lett., 104, 202406 (2014). 18)C. Fan, Q. Yue, J. H. Yang, Z. M. Wei, S. X. Yang, Jingbo Li, “Low temperature electrical and photo-responsive properties of MoSe2”, Appl. Phys. Lett., 104, 202105 (2014). 19)Z. H. Chen, X. W. Jiang, S. Dong, Jingbo Li, S. S. Li, L. W. Wang, “Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes”, Appl. Phys. Lett., 104, 021120 (2014). 20)S. Tongay, D. S. Narang, J. Kang, W. Fan, C. Ko, A. V. Luce, K. X. Wang, J. Suh, K. D. Patel, V. M. Pathak, Jingbo Li, J. Wu, “Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2”, Appl. Phys. Lett., 104, 012101 (2014). 21)Y. Li, S. X. Yang, Jingbo Li, “Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field”, J. Phys. Chem. C., 118, 23970 (2014). 22)Z. H. Chen, Jingbo Li, S. S. Li, L. W. Wang, “Approximate Hessian for accelerating ab initio structure relaxation by force fitting”, Phys. Rev. B 89, 144110 (2014). 23)R. X. Li, J. H. Yang, N. J. Huo, C. Fan, F. Lu, T. Yan, Z. M. Wei, Jingbo Li, “Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors”, ChemPhysChem, 15, 2510 (2014). 24)Y. Li, J. Kang, Jingbo Li, “Indirect-to-direct band gap transition of ZrS2 monolayer by strain: first-principles calculations”, RSC Adv., 4, 7396 (2014). 25)J. H. Yang, R. X. Li, N. J. Huo, W. L. Ma, F. Lu, C. Fan, S. X. Yang, Z. M. Wei, Jingbo Li, and S. S. Li, “Oxygen-induced abnormal photoelectric behavior of a MoO3/graphene heterocomposite”, RSC Adv., 4, 49873 (2014). 26)F. Y. Lu, R. Li, N. J. Huo, J. Yang, C. Fan, X. Z. Wang, S. X. Yang, Jingbo Li, “Synthesis of the Bi2S3-Bi2O3 composites and their enhanced photosensitive property”, RSC Adv., 4, 5666 (2014). 27)C. Fan, Z. M. Wei, S. X. Yang, Jingbo Li, “Synthesis of MoSe2 flower-like nanostructures and its photo-responsive properties”, RSC Adv., 4, 775 (2014). 28)J. Kang, Jingbo Li, S. S. Li, J. B. Xia, and L.-W. Wang, “Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures”, Nano Letters, 13, 5485 (2013). 29)S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree,, Jingbo Li, J. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons”, Scientific Reports, 3, 2657 (2013). 30)S. Tongay, J. Zhou, C. Ataca, J. Liu, J. Kang, T. Matthews, L. You, Jingbo Li, J. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physi-sorption gating”, Nano Letters, 13, 2831 (2013). 31)X. Q. Meng, S. Tongay, J. Kang, Z. H. Chen, F. M. Wu, S. S. Li, J. B. Xia, Jingbo Li, and J. Wu, “Stable p- and n-type doping of few-layer graphene/graphite”, Carbon, 57, 507 (2013). 32)J. Kang, S. Tongay, J. Zhou, Jingbo Li, and J. Wu, “Band offsets and Heterostructures of Two-Dimensional Semiconductors”, Appl. Phys. Lett., 102, 012111 (2013). 33)H. F. Dong, Z. G. Wu, S. Wang, W. F. Duan, Jingbo Li, “Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial compression or biaxial tension”, Appl. Phys. Lett., 102, 072905 (2013). 34)H. F. Dong, C. Q. Chen, S. Wang, W. F. Duan, Jingbo Li, “Elastic properties of tetragonal BiFeO3 from first-principles calculations”, Appl. Phys. Lett., 102, 182905 (2013). 35)H. W. Peng, Jingbo Li, S. H. Wei, “Chemical trends of magnetic interaction in Mn-doped III-V semiconductors”, Appl. Phys. Lett., 102, 122409 (2013). 36)S. X. Yang, S. Tongay, S. S. Li, J. B. Xia, J. Wu, Jingbo Li, “Environmentally Stable / Self-powered UV Photodetectors with High Sensitivity”, Appl. Phys. Lett., 103, 143503 (2013). 37)X. Q. Meng, Z. H. Chen, Z. Chen, F. M. Wu, S. S. Li, Jingbo Li, J. Wu, S.-H. Wei, “Enhancing Structural Transition by Carrier and Quantum Confinement: Stabilization of Cubic InN Quantum Dots by Mn Incorporation”, Appl. Phys. Lett., 103, 253102 (2013). 38)Z. H. Chen, X. W. Jiang, Jingbo Li, S. S. Li, “A sphere-cut-splice crossover for the evolution of cluster structures”, J. Chem. Phys., 138, 214303 (2013). 39)C. Li, S. X. Yang, S. S. Li, J. B. Xia, and Jingbo Li, “Au Decorated Silicene: Design of High Activity Catalyst toward CO Oxidation”, J. Phys. Chem. C, 117, 483 (2013). 40)H. X. Deng, S.-H. Wei, S. S. Li, Jingbo Li, A. Walsh, “Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors”, Phys. Rev. B, 87, 125203 (2013). 50)H. Sahin, S. Tongay, S. Horzum, W. Fan, Zhou, Jingbo Li, J. Wu, and F. M. Peeters “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2”, Phys. Rev. B, 87, 165409 (2013). 41)N. J. Huo, S. X. Yang, Z. M. Wei, Jingbo Li, “Synthesis of WO3 nanostructures and their ultraviolet photo-response property”, J. Mater. Chem. C, 1, 3999 (2013). 42)Q. Yue, S. L. Chang, J. Kang, S. Q. Qin, and Jingbo Li, “Mechanical and Electronic Properties of Graphyne and Its Family Under Elastic Strain: Theoretical Predictions”, J. Phys. Chem. C, 117, 14804 (2013). 43)N. J. Huo, Q. Yue, J. H. Yang, S. X. Yang, Jingbo Li, “Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles”, ChemPhysChem, 14, 4069 (2013). 44)X. Z. Wang, X. Q. Meng, Z. M. Zeng, F. M. Wu, Jingbo Li, Hydrothermal synthesis of WO3·0.5H2O microtubes with excellent photocatalytic properties, Appl. Surf. Sci, 282, 826 (2013). 45)M. Z. Zhong, X. Q. Meng, F. M. Wu, Jingbo Li, Y. Fang, “Mo-doping-enhanced dye absorption of Bi2Se3 nanoflowers”, Nanoscale Res. Lett., 8, 451 (2013). 46)Q. Yue, Z. Z. Shao, S. L. Chang, Jingbo Li, “Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field”, Nanoscale Res. Lett., 8, 425 (2013). 48)S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, Jingbo Li, J. C. Grossman, and J. Wu, “Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2”, Nano Letters, 12, 5576 (2012). 49)J. Kang, F. M. Wu, S. S. Li, J. B. Xia, and Jingbo Li, “Antiferromagnetic coupling and spin filtering in asymmetrically hydrogenated graphene nanoribbon homojunction”, Appl. Phys. Lett., 100, 153102 (2012). 50)J. Kang, F. M. Wu, and Jingbo Li, “Symmetry-Dependent Transport Properties and Magnetoresistance in Zigzag Silicene Nanoribbons”, Appl. Phys. Lett., 100, 233122 (2012). 51)C. Li, Jingbo Li, S. S. Li, J. B. Xia, and S.-H. Wei, “Selection rule of preferred doping site for n-type oxides ”, Appl. Phys. Lett., 100, 262109 (2012). 52)C. Li, F. M. Wu, S. S. Li, J. B. Xia, and Jingbo Li, “Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys”, Appl. Phys. Lett., 101, 062102 (2012). 53)H. X. Deng, S. S. Li, Jingbo Li, S.-H. Wei, “Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures ”, Phys. Rev. B, 85, 195328 (2012). 54)Q. Yue, S. L. Chang, J. Kang, J. Tan, S. Q. Qian, and Jingbo Li, “Symmetry-dependent transport properties and bipolar spin-filtering in zigzag α-graphyne nanoribbons”, Phys. Rev. B, 86, 2354488 (2012). 55)Q. Yue, S. L. Cheng, J. Kang, J. C. Tan, S. Q. Qin, and Jingbo Li, “Magnetic and electronic properties ofα-graphdyne nanoribbons”, J. Chem. Phys., 136, 244702 (2012). 56)J. Kang, F. M. Wu, S. S. Li, J.-B. Xia, and Jingbo Li, “Calculating Band Alignment between Materials with Different Structures: The case of Anatase and Rutile Titanium Dioxide”, J. Phys. Chem. C, 116, 20765 (2012). 57)C. Li, F. M. Wu, Jingbo Li, and L.-W. Wang, “Self-Assembled Ti Quantum Wire on Zigzag Graphene Nanoribbons with One Edge Saturated”, J. Phys. Chem. C, 116, 24824 (2012). 58)J. Wang, S. S. Li, Y. Liu, and Jingbo Li, “Passivation of CuI Quantum Dots”, J. Phys. Chem. C, 116, 21039 (2012). 59)J. Kang, F. M. Wu, and Jingbo Li, “Doping induced spin filtering effect in zigzag graphene nanoribbons with asymmetric edge hydrogenation”, Appl. Phys. Lett., 98, 083109 (2011). 60)W. Chen and Jingbo Li, “Origin of the low thermal conductivity of the thermoelectric material β-Zn4Sb3: An ab initio theoretical study”, Appl. Phys. Lett., 98, 241901(2011). 61)C. Li, F. M. Wu, and Jingbo Li, “Kinetic and relativistic effects on the surface alloy formation of Au adsorbed on Si(111)-Pb surface”, Appl. Phys. Lett., 99, 211912 (2011). 62)M. Q. Meng, F. M. Wu, and Jingbo Li, “Study on optical properties of type-II SnO2/ZnO core/shell nanowires”, J. Phys. Chem. C, 115, 7225 (2011). 63)J. Kang, Jingbo Li, F. M. Wu, S. S. Li, J. B. Xia, L. W. Wang, “Elastic, electronic and optical properties of two-dimensional graphyne sheet”, J. Phys. Chem. C, 115, 20466 (2011). 64)C. Li, Jingbo Li, F. M. Wu, S. S. Li and J. B. Xia “High Capacity Hydrogen Storage in Ca Decorated Graphyne: A First-Principles Study”, J. Phys. Chem. C, 115, 23221 (2011). 65)M. Wang, Y. Wang, and Jingbo Li, “ZnO nanowire arrays coating on TiO2 nanoparticles as composite photoanode for a high efficiency DSSC”, Chem Comm., 47, 11246 (2011). 66)M. Q. Meng, H. W. Peng, Y. Q. Gai, and Jingbo Li, “Influence of ZnS and MgO shell on the photoluminescence properties of ZnO core/shell nanowires”, J. Phys. Chem. C, 114, 1467 (2010). 99)H. X. Deng, S. S. Li, and Jingbo Li, “Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots”, J. Phys. Chem. C, 114, 4841 (2010). 67)M. Q. Meng, L. M. Tang, and Jingbo Li, “Room-Temperature Ferromagnetism in Co-doped In2O3 Nanocrystals”, J. Phys. Chem. C, 114, 17569 (2010). 68)H. X. Deng, Jingbo Li，S. S. Li, J. B. Xia, L. W. Wang, and, S.-H. Wei, “Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs”, Phys. Rev. B, 82, 193204 (2010). 69)L. X. Zhang, X. F. Zhou, H. T. Wang, J. J. Xu, Jingbo Li, E. G. Wang, S.-H. Wei, “Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies”, Phys. Rev. B 82, 125412 (2010). 70)H. X. Deng, Jingbo Li，S. S. Li, J. B. Xia, A. Walsh, and, S.-H. Wei, “Origin of antiferromagnetism in CoO: A density functional theory study”, Appl. Phys. Lett. 96, 162508(2010). 71)Z. G. Wang, Jingbo Li, F. Gao, and W. J. Weber, “Codoping of magnesium with oxygen in GaN nanowires”, Appl. Phys. Lett. 96, 103112 (2010). 72)Z. G. Wang, Jingbo Li, F. Gao, W. J. Weber, “Charge Separation of Wurtzite/Zinc-Blende Heterostructures in GaN Nanowires”, ChemPhysChem, 11, 3329 (2010). 73)Z. G. Wang, C.L. Zhang, Jingbo Li, F. Gao, W. J. Weber, “First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions”, Computational Materials Science, 50, 344 (2010). 74)H. W. Peng, H. J. Xiang, S. H. Wei, S. S. Li, J. B. Xia, and Jingbo Li, “Origin and enhancement of hole-induced ferromagnetism in first-row d0 semiconductors”, Phys. Rev. Lett. 102, 017201 (2009). 75)Y. Q. Gai, Jingbo Li, S. S. Li, J. B. Xia, and S. H. Wei, “Design of narrow-gap TiO2 for enhanced photoelectrochecmical activity: A passivated codoping approach”, Phys. Rev. Lett. 102, 036402 (2009). 76)H. W. Peng, Jingbo Li, S. S. Li, and J. B. Xia, “Possible origin of ferromagnetism in undoped anatase TiO2”, Phys. Rev. B , 79, 092411 (2009). 77)Z. G. Wang, F. Gao, Jingbo Li, X. T. Zu, and W. J. Weber “Controlling Electronic Structures by Electron Irradiation in Single-walled SiC nanotubes: A first Principles Molecular Dynamics Study”, Nanotechnology, 20, 075708 (2009). 78)Z. G. Wang, S. Wang, Jingbo Li, F. Gao, and W. J. Weber “Structure and electronic properties of saturated and unsaturated gallium nitride nanotubes”, J. Phys. Chem. C, 113, 19281 (2009). 79)Y. Q. Gai, H. W. Peng, and Jingbo Li, “Electronic Properties of Nonstoichiometric PbSe Quantum Dot from Frst Principles”, J. Phys. Chem. C, 113,21506 (2009). 80)Y. Q. Gai, Jingbo Li, S. S. Li, J. B. Xia, Y. Yan, S.-H. Wei, “Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation”, Phys. Rev. B, 80, 153201 (2009). 81)Y. H. Li, A. Walsh, S. Chen, W. J. Yin, J. H. Yang, Jingbo Li, J. Da Silva, X. G. Gong, and S-H. Wei, “Revised ab initio nature band offsets of all group IV, II-VI, and III-V semiconductors”, Appl. Phys. Lett. 94, 212109 (2009). 82)L. X. Zhang, J. L. F Da Sliva, Jingbo Li, Y. Yan, T. A. Gessert, and S. H. Wei, “Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries”, Phys. Rev. Lett. 101, 155501 (2008). 83)H. J. Xiang, S-. H. Wei, J. L. F Da Sliva, and Jingbo Li, “Enhanced alloy solubility and band gap tenability in ternary InGaN nanowires”, Phys. Rev. B 78, 193301, (2008). 84)Jingbo Li, S. H. Wei, S. S. Li, and J. B. Xia, “Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study”, Phys. Rev. B 77, 113304 (2008). 85)H. W. Peng and Jingbo Li, “Quantum Confinement and Electronic Properties of Rutile TiO2 Nanowires”, J. Phys. Chem. C 112, 20241 (2008). 86)H. W. Peng, Jingbo Li, S. S. Li, and J. B. Xia, “First-Principles Study on Rutile TiO2 Quantum Dots”, J. Phys. Chem. C 112, 13964 (2008). 87)X. W. Zhang, Jingbo Li, S. S. Li, and J. B. Xia, “Electronic structure and optical gain of wurtzite ZnO nanowires”, Appl. Phys. Lett. 92, 181101 (2008). 88)P. Ma, Y. Q. Gai, J. X. Wang, F. H. Yang, Y. P. Zeng, J. M. Li, Jingbo Li, “Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O2”, Appl. Phys. Lett. 93, 102112 (2008). 89)F. Wang, Jingbo Li, S. S. Li, J. B. Xia, and S.H.Wei, “Mg acceptor energy levels in AlInGaN quaternary alloys”, Phys. Rev. B 77, 113202 (2008). 90)Y. Q. Gai, B. Yao, Z. P. Wei, Y. F. Li, Y. M. Lu, D. Z. Shen, J. Y. Zhang, D. Z. Zhao, X. W. Fan, Jingbo Li* and J. B. Xia, “Effect on nitrogen acceptor as Mg is alloyed into ZnO”, Appl. Phys. Lett. 92, 062110 (2008). 91)F. Wang, H. Yu, Jingbo Li and Q. Hang, D. Zemlyanov, P. C. Gibbons, L. W. Wang, and W. E Buhro, “Spectroscopic properties of colloidal InP quantum wires”, J. Am. Chem. Soc. 129, 14327 (2007). 92)Q. Xu, J. W. Luo, S. S. Li, J. B. Xai, Jingbo Li, and S. H.Wei, “Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants”, Phys. Rev. B 75, 235304 (2007). 93)F. Wang, S. S. Li, J. B. Xai, H. X. Jiang, J. Y. Lin, Jingbo Li, and S. H.Wei*, “Effects of the wave function localization in AlxInyGa1-x-yN quaternary alloys”, Appl. Phys. Lett. 91, 061125 (2007).

我的团队	已组建了一支知识结构合理，包括教授、副教授、讲师、博士后、博士、硕士在内的富有朝气的研究队伍。